Leader in Integrated ICT Hardware & Systems
Professor Hurley received his Ph.D. (1990) and B.Eng. (1985, 1st class honors) in Electronic Engineering at the University of Liverpool. Paul is the Head of the Nanoelectronic Materials and Devices Group at the Tyndall National Institute and a Research Professor in Depertment of Chemistry at University College Cork.
Paul’s research group are exploring alternative semiconductor materials and device structures aimed at improving energy efficiency in the next generation of logic switches which will be used in applications, covering: nanoelectronics, flexible electronics, mobile communications and low power sensor technologies. Paul leads a research team of around ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform research into alternative semiconductor materials and device structures aimed at improving the energy efficiency in the next generation of logic devices. In particular the group are working on III-V and 2D (e.g., MoS2, WSe2) semiconductors and their interfaces with metals and oxides which will form the heart of logic devices incorporating these materials. The group are also exploring the use of metal-oxide-semiconductor (MOS) systems for the creation of solar fuels through water splitting reactions
Paul leads a research team of ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform basic research on high dielectric constant (high-k) thin films for applications in nanoelectronics. The current research work covers use of high-k oxides in conjunction with III-V and 2D semiconductor materials for future energy efficient logic devices and the use of high-k films in integrated capacitors. The groups are also exploring the use of MOS systems in energy applications as well as investigating the electrical properties of emerging phase change materials. Paul received an Intel Outstanding Researcher award for his work in high-k/III-V interface defect studies in 2012. Paul is a member of the Technical Committee of the Insulating Films on Semiconductors (INFOS) conference and the International Workshop on Dielectrics in Microelectronics (WoDiM). In addition to research activities, he is a part time lecturer in the Department of Electrical Engineering at University College Cork. He has published over one hundred papers in the field of micro and nanoelectronics, and has given over 25 invited presentations and seminars in the high-k area from 2006 to 2014.
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| Science Foundation of Ireland | 05-JUN-07 | 28-AUG-07 | SFI-Summer Student David Kohen | Principal Investigator |
| Science Foundation of Ireland | 05-JUN-06 | 28-AUG-06 | Summer Student - David Hondagneu | Principal Investigator |
| Science Foundation of Ireland | 01-MAY-08 | 31-OCT-08 | SFI"Future Oxides & Channel Materials for Ultimate Scaling" FOCUS | Principal Investigator |
| European Union | 01-JAN-08 | 31-DEC-15 | EU 'Silicon-based Nanostructures & Nanodevices for Long Term Nanoelectronics Applications' | Principal Investigator |
| Science Foundation of Ireland | 01-JAN-12 | 31-DEC-12 | Fabrication and characterisation of Schottky contacts and capacitor structures on Chalcogenide passivated germanium. | Principal Investigator |
| Science Foundation of Ireland | 01-OCT-09 | 31-DEC-15 | Future Oxides and Channel Materials for Ultimate Scaling (FOCUS) | Principal Investigator |
| Science Foundation of Ireland | 01-JAN-12 | 01-FEB-14 | The junctionless InGaAs MOSFET - The platform and the process. | Principal Investigator |
| Science Foundation of Ireland | 01-AUG-05 | 30-JUN-12 | SFI "High Dielectric Constant Materials for Future ICT" | Principal Investigator |
| Irish Research Council for Science, Engineering & Technology (IRCSET) | 01-OCT-06 | 28-FEB-10 | IRCSET Scholarship - Rathnait Long | Principal Investigator |
| Science Foundation of Ireland | 01-DEC-07 | 30-MAY-08 | Total External Reflection X-ray Fluorescence Spectrometer for Compositional Analysis of Thin Films | Principal Investigator |
| Irish Research Council for Science, Engineering & Technology (IRCSET) | 01-OCT-09 | 30-SEP-12 | IRCSET-Marie Curie International Mobility Fellowships in Science Engineering and Technology | Principal Investigator |
| European Union | 01-DEC-12 | 30-NOV-15 | SYnthesis and functionality of chalcogenide NAnostructure for PhasSE change memories. | Principal Investigator |
| Industry | 01-DEC-13 | 31-DEC-21 | Hopkins Communicaqtions WoDIM Conference 2014 | Principal Investigator |
| European Union | 01-NOV-13 | 30-APR-17 | Compound Semiconductors for 3D integration. | Principal Investigator |
| Science Foundation of Ireland | 01-DEC-14 | 31-JUL-18 | Understanding the nature of Interfaces in two dimensional Electronic Devices. | Principal Investigator |
| Science Foundation of Ireland | 01-SEP-14 | 31-MAY-18 | Copper diffusion barrier layers for advanced interconnect integration. | Principal Investigator |
| Science Foundation Ireland | 01-APR-10 | 31-AUG-15 | "Investigating Emerging Non-Silicon Transistors (INVENT)" | |
| Science Foundation Ireland | 01-DEC-07 | 31-MAY-13 | FORME | |
| Other: Not Listed | 01-AUG-10 | 31-JUL-12 | Fieldeffect controllable antifuse structures based on dielectric breakdown | |
| Intel Corporation | 02-APR-12 | 29-MAR-13 | Dit extractions and interpretation on III-V device related structures | |
| Intel Corporation | 01-APR-11 | 30-MAR-12 | Development of measurement capability for high-k/InGaAs systems and CV and GV analysis of samples from INTEL CR | |
| Science Foundation Ireland | 01-DEC-13 | 30-NOV-16 | “Research into Emerging Nano-structured Electrodes for the splitting of Water (RENEW) | |
| Intel Corporation | 01-MAR-14 | 28-FEB-15 | Characteristaion of 2D Materials | |
| Intel Corporation | 01-APR-13 | 28-MAR-14 | Investigating the capacitance and conductance of narrow band gap MOS systems and its possible application to Cox extraction | |
| European Commission | 01-JUN-06 | 30-SEP-09 | Pulling the Limits of NanoCMOS electronics (PULLNANO) EU Integrated Project | |
| European Commission | 01-JAN-08 | 30-DEC-10 | Silicon-based nanostructures and nanodevices for nanoelectronics (NANOSIL) EU Network of Excellence | |
| Enterprise Ireland | 03-FEB-09 | 31-AUG-12 | Epitaxial Nanostructured GaAs on silicon for next generation Electronics (ENGAGE) | |
| Irish Research Council | 01-OCT-09 | 28-SEP-12 | An investigation of carrier transport in compound semiconductor MOSFETs | |
| European Commission | 03-SEP-01 | 25-AUG-04 | Ferroelectrics for Europe (FLEUR) | |
| Irish Research Council | 02-OCT-06 | 25-SEP-09 | ‘Deposition of High-k Dielectrics on III-V Substrates’ | |
| European Commission | 01-JUN-00 | 30-JUN-03 | Tantalum pentoxide photodeposition on silicon (TOPS) |
| Company | Country | Name |
|---|---|---|
| Stanford University | U.S.A. | Prof Paul C McIntyre |
| University of Texas at Dallas | U.S.A. | Prof Robert Wallace |
| INTEL Corporation | U.S.A. | Dr Kelin Kuhn Intel Fellow |
| IBM Yorktown | U.S.A. | Dr. Richard Haight |
| Glasgow University | SCOTLAND | Prof Iain Thayne |
| IBM Zurich | SWITZERLAND | Dr Jean Fompeyrine |
| Universitat Autonoma de Barcelona | SPAIN | Prof Enrique Miranda |
| University of Siegen | GERMANY | Prof Max Lemme |
| Liverpool Univeristy | UNITED KINGDOM | Prof Steve Hall |
| Trinity College Dublin | IRELAND | Prof Georg Duesberg |
| Trinity College Dublin | IRELAND | Prof John Boland |
| IMEP Grenoble | FRANCE | Prof Gerard Ghibaudo |
| Catholic University of Leuven | BELGIUM | Prof Valery Afanasev |
| Tyndall | IRELAND | Prof Martyn Pemble |
| Tyndall | IRELAND | Dr Ian Povey |
| Tyndall | IRELAND | Prof Jim Greer |
| Dublin City University | IRELAND | Prog Greg Hughes |
| Queens University Belfast | UNITED KINGDOM | Dr David McNeill |
| Trinity College Dublin | IRELAND | Dr Robert Barklie |
| University of Texas at Dallas | U.S.A. | Prof Masimmo Fischetti |
| Chalmers University | SWEDEN | Prof Olof Engstrom |
| Year | Publication |
|---|---|
| 2010 | Gate Stacks O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) Gate Stacks. : John Wiley & Sons, Inc.. |
| 2010 | Chapter 2: Gate Stacks O. Engström, I. Z. Mitrovic, S. Hall, P. K. Hurley, K. Cherkaoui, S. Monaghan, H. D. B. Gottlob and M. C. Lemme (2010) Chapter 2: Gate Stacks. : John Wiley & Sons, Inc.. |
| 2003 | Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2 Modreanu, M.,Hurley, P. K.,O'Sullivan, B. J.,O'Looney, B.,Senateur, J. P.,Rousell, H.,Rousell, F.,Audier, M.,Dubourdieu, C.,Boyd, I. W.,Fang, Q.,Leedham, T. L.,Rushworth, S.,Jones, A. C.,Davies, H.,Jimenez, C.,Blau, W. J.,Donegan, J. F.,Duke, A. F.,MacCraith, J. A.,McMillan, N. D.,Oconnor, G. M.,Omongain, E.,Toal, V.,McLaughlin, J. A. (2003) Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2. : . |
| Year | Journal | Publication |
|---|---|---|
| 2014 | Applied Physics Letters | Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ (2014) Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing. : . [Details] |
| 2014 | Applied Physics Letters | Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing Cabrera, W and Brennan, B and Dong, H and O'Regan, TP and Povey, IM and Monaghan, S and O'Connor, 'E and Hurley, PK and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : . |
| 2014 | Applied Physics Letters | Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers Gajula, D.R. and Baine, P. and Modreanu, M. and Hurley, P.K. and Armstrong, B.M. and McNeill, D.W. (2014) Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers. : . |
| 2014 | Journal of Applied Physics | A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures Lin, J,Walsh, L,Hughes, G,Woicik, JC,Povey, IM,O'Regan, TP,Hurley, PK (2014) A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures. : . [Details] |
| 2013 | Journal of Applied Physics | Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics Saura, X,Sune, J,Monaghan, S,Hurley, PK,Miranda, E (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : . [Details] |
| 2013 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors. : . |
| 2013 | Journal of Vacuum Science & Technology B | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . [Details] |
| 2013 | Journal of Applied Physics | Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : . [Details] |
| 2013 | Journal of Applied Physics | An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details] |
| 2013 | Microelectronic Engineering | Electrically active interface defects in the In0.53Ga0.47As MOS system Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : . [Details] |
| 2013 | Journal of Applied Physics | Chemical and electrical characterization of the HfO2/InAlAs interface Brennan, B,Galatage, RV,Thomas, K,Pelucchi, E,Hurley, PK,Kim, J,Hinkle, CL,Vogel, EM,Wallace, RM (2013) Chemical and electrical characterization of the HfO2/InAlAs interface. : . [Details] |
| 2013 | IEEE Transactions on Device and Materials Reliability | The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details] |
| 2013 | Journal of Applied Physics | An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details] |
| 2013 | Physical Review B | Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures Walsh, LA,Hughes, G,Lin, J,Hurley, PK,O'Regan, TP,Cockayne, E,Woicik, JC (2013) Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures. : . [Details] |
| 2013 | Solid-State Electronics | Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : . [Details] |
| 2013 | Microelectronics Reliability | Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress Saura, X,Moix, D,Sune, J,Hurley, PK,Miranda, E (2013) Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. : . [Details] |
| 2013 | Microelectronic Engineering | Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, 'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system. : . |
| 2013 | Journal of Applied Physics | Chemical and electrical characterization of the HfO2/InAlAs interface Brennan, B. and Galatage, R. V. and Thomas, K. and Pelucchi, E. and Hurley, P. K. and Kim, J. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M. (2013) Chemical and electrical characterization of the HfO2/InAlAs interface. : . [Details] |
| 2013 | ECS Transactions | Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, 'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : . |
| 2013 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . |
| 2012 | Journal of the Electrochemical Society | Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011). : . [Details] |
| 2012 | IEEE Transactions On Electron Devices | Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : . |
| 2012 | Applied Physics Letters | Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3 Chou, HY,O'Connor, E,Hurley, PK,Afanas'ev, VV,Houssa, M,Stesmans, A,Ye, PD,Newcomb, SB (2012) Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3. : . [Details] |
| 2012 | Semiconductor Science and Technology | On the activation of implanted silicon ions in p-In0.53Ga0.47As Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : . [Details] |
| 2012 | Semiconductor Science and Technology | On the activation of implanted silicon ions in p-In0.53Ga0.47As Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K. (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : . |
| 2012 | Journal of the Electrochemical Society | Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)) Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)). : . [Details] |
| 2012 | Applied Physics Letters | A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures Walsh, LA,Hughes, G,Hurley, PK,Lin, J,Woicik, JC (2012) A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures. : . [Details] |
| 2012 | Electrochemical Society Transactions | Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics? Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : . [Details] |
| 2012 | Microelectronic Engineering | The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : . [Details] |
| 2011 | Applied Physics Letters | In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition Milojevic, M,Contreras-Guerrero, R,O'Connor, E,Brennan, B,Hurley, PK,Kim, J,Hinkle, CL,Wallace, RM; (2011) In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition. : . [Details] |
| 2011 | Journal of Vacuum Science & Technology B | Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S. Monaghan, A. O'Mahony, K. Cherkaoui, É. O'Connor, I. M. Povey, M. G. Nolan, D. O'Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, S. B. Newcomb; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : . |
| 2011 | Journal of Vacuum Science & Technology B | Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : . [Details] |
| 2011 | Applied Physics Letters | Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures O'Regan, TP,Hurley, PK (2011) Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures. : . [Details] |
| 2011 | Applied Physics Letters | Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors Negara, MA,Veksler, D,Huang, J,Ghibaudo, G,Hurley, PK,Bersuker, G,Goel, N,Kirsch, P (2011) Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors. : . [Details] |
| 2011 | Microelectronic Engineering | Investigation of bulk defects in amorphous and crystalline HfO2 thin films Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details] |
| 2011 | Microelectronic Engineering | Multi-technique characterisation of MOVPE-grown GaAs on Si Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : . [Details] |
| 2011 | Applied Physics Letters | On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors Sonnet, A. M. and Galatage, R. V. and Hurley, P. K. and Pelucchi, E. and Thomas, K. K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Wallace, R. M. and Vogel, E. M. (2011) On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors. : . |
| 2011 | Microelectronic Engineering | Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs Sonnet, A. M. and Galatage, R. V. and Hurley, P. M. and Pelucchi, E. and Thomas, K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Vogel, E. M. (2011) Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs. : . |
| 2011 | Applied Physics Letters | Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : . [Details] |
| 2011 | Advanced Materials Research | Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs. : . |
| 2011 | Electrochemical Society Transactions | Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K. (2011) Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : . [Details] |
| 2011 | Microelectronic Engineering | Transport and interface states in high-κ LaSiO x dielectric Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. (2011) Transport and interface states in high-κ LaSiO x dielectric. : . |
| 2011 | Journal of Applied Physics | A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K. (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers. : . |
| 2011 | Journal of Vacuum Science & Technology B | Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B. (2011) Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer. : . |
| 2011 | Microelectronic Engineering | The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : . |
| 2011 | Applied Physics Letters | On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors Sonnet, AM,Galatage, RV,Hurley, PK,Pelucchi, E,Thomas, KK,Gocalinska, A,Huang, J,Goel, N,Bersuker, G,Kirk, WP,Hinkle, CL,Wallace, RM,Vogel, EM (2011) On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors. : . [Details] |
| 2011 | Journal of Applied Physics | A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers O’Connor, 'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers. : . |
| 2010 | Journal of Crystal Growth | Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells Young, RJ,Mereni, LO,Petkov, N,Knight, GR,Dimastrodonato, V,Hurley, PK,Hughes, G,Pelucchi, E; (2010) Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. : . [Details] |
| 2010 | Applied Physics Letters | Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections O'Regan, TP,Hurley, PK,Soree, B,Fischetti, MV; (2010) Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections. : . [Details] |
| 2010 | Applied Physics Letters | Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates Shin, B,Weber, JR,Long, RD,Hurley, PK,Van de Walle, CG,McIntyre, PC; (2010) Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates. : . [Details] |
| 2010 | Applied Physics Letters | Electron energy band alignment at the (100)Si/MgO interface Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK; (2010) Electron energy band alignment at the (100)Si/MgO interface. : . [Details] |
| 2010 | Journal of Applied Physics | A systematic study of NH42S passivation '22%, 10%, 5%, or 1%' É. O'Connor; B. Brennan; V. Djara; K. Cherkaoui; S. Monaghan; S. B. Newcomb; R. Contreras; M. Milojevic; G. Hughes; M. E. Pemble; R. M. Wallace; P. K. Hurley; (2010) A systematic study of NH42S passivation '22%, 10%, 5%, or 1%'. : . |
| 2010 | Applied Physics Letters | Electron band alignment between (100)InP and atomic-layer deposited Al2O3 Chou, HY,Afanas'ev, VV,Stesmans, A,Lin, HC,Hurley, PK,Newcomb, SB; (2010) Electron band alignment between (100)InP and atomic-layer deposited Al2O3. : . [Details] |
| 2010 | Applied Physics Letters | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details] |
| 2010 | Electrochemical Society Transactions | Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O. (2010) Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition. : . |
| 2010 | Applied Physics Letters | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details] |
| 2009 | Microelectronic Engineering | Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2 Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2. : . |
| 2009 | Applied Physics Letters | Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2 Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB; (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : . [Details] |
| 2009 | Applied Physics Letters | Electrical characterization of the soft breakdown failure mode in MgO layers Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : . [Details] |
| 2009 | Microelectronic Engineering | Degradation Dynamics and Breakdown of MgO Gate Oxides Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK; (2009) Degradation Dynamics and Breakdown of MgO Gate Oxides. : . [Details] |
| 2009 | Applied Physics Letters | Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P; (2009) Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers. : . [Details] |
| 2009 | Microelectronic Engineering | Band Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2 Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2009) Band Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2. : . [Details] |
| 2009 | Electrochemical and Solid State Letters | Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001) Shin, B, Cagnon, J, Long, RD, Hurley, PK, Stemmer, S, McIntyre, PC; (2009) Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001). : . [Details] |
| 2009 | Applied Physics Letters | Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 ≪= X ≪= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2 Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2009) Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 ≪= X ≪= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2. : . [Details] |
| 2009 | Journal of Vacuum Science & Technology B | Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC; (2009) Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors. : . [Details] |
| 2009 | Electrochemical and Solid State Letters | Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as Brennan, B, Milojevic, M, Kim, HC, Hurley, PK, Kim, J, Hughes, G, Wallace, RM; (2009) Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as. : . [Details] |
| 2009 | Applied Physics Letters | Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK; (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : . [Details] |
| 2009 | IEEE Electron Device Letters | TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications. : . [Details] |
| 2009 | Journal of Applied Physics | Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G; (2009) Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge. : . [Details] |
| 2009 | Solid-State Electronics | Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A; (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . [Details] |
| 2009 | Journal of Applied Physics | Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : . [Details] |
| 2009 | Applied Physics Letters | Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : . [Details] |
| 2009 | Electrochemical and Solid State Letters | Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin, B,Cagnon, J,Long, RD,Hurley, PK,Stemmer, S,McIntyre, PC; (2009) Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001). : . [Details] |
| 2009 | Journal of Applied Physics | Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G; (2009) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge. : . [Details] |
| 2009 | IEEE Electron Device Letters | TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications. : . [Details] |
| 2009 | Microelectronics Reliability | Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : . [Details] |
| 2009 | Electrochemical Society Transactions | Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K. (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : . [Details] |
| 2009 | Microelectronic Engineering | Degradation dynamics and breakdown of MgO gate oxides Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K. (2009) Degradation dynamics and breakdown of MgO gate oxides. : . |
| 2009 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C. (2009) Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors. : . |
| 2009 | IEEE Electron Device Letters | TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S. (2009) TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications. : . |
| 2009 | Microelectronic Engineering | Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2 Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. : . |
| 2009 | Applied Physics Letters | Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2 Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : . |
| 2009 | Solid-State Electronics | Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . [Details] |
| 2009 | Applied Physics Letters | Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2 Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2. : . |
| 2009 | Electrochemical and Solid State Letters | Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As Brennan, B,Milojevic, M,Kim, HC,Hurley, PK,Kim, J,Hughes, G,Wallace, RM; (2009) Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As. : . [Details] |
| 2008 | Chemphyschem | Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2008) Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films. : . [Details] |
| 2008 | Journal Of Applied Physicsjournal Of Applied Physics | Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q. (2008) Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation. : . |
| 2008 | Applied Physics Letters | Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2 Afanas'ev, VV, Badylevich, M, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2008) Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2. : . [Details] |
| 2008 | Solid-State Electronics | High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ; (2008) High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy. : . [Details] |
| 2008 | Journal of Applied Physics | Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ; (2008) Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation. : . [Details] |
| 2008 | Applied Physics Letters | Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy Dobaczewski, L, Bernardini, S, Kruszewski, P, Hurley, PK, Markevich, VP, Hawkins, ID, Peaker, AR; (2008) Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy. : . [Details] |
| 2008 | Applied Physics Letters | In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : . [Details] |
| 2008 | Journal of the Electrochemical Society | Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB; (2008) Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon. : . [Details] |
| 2008 | Chemphyschem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . |
| 2008 | Journal of Material Chemistry | Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix. : . |
| 2008 | Chem. Phys. Chem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . |
| 2008 | Chemphyschem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.. : . [Details] |
| 2008 | Applied Physics Letters | Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2 Afanas'ev, VV,Badylevich, M,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB; (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2. : . [Details] |
| 2008 | Chemphyschem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . [Details] |
| 2008 | Applied Physics Letters | Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy Dobaczewski, L,Bernardini, S,Kruszewski, P,Hurley, PK,Markevich, VP,Hawkins, ID,Peaker, AR; (2008) Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy. : . [Details] |
| 2008 | Journal of the Electrochemical Society | Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB; (2008) Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon. : . [Details] |
| 2008 | Applied Physics Letters | In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : . [Details] |
| 2008 | Applied Physics Letters | Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2) Afanas'ev, V. V.,Badylevich, M.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2). : . |
| 2008 | Applied Physics Letters | In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B. (2008) In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric. : . |
| 2008 | Applied Physics Letters | In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : . |
| 2008 | Applied Physics Letters | Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2 Afanasev, VV and Badylevich, Mikhail and Stesmans, Andre and Brammertz, Guy and Delabie, Annelies and Sionke, S and OMahony, A and Povey, IM and Pemble, ME and OConnor, E and others (2008) Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2. : . |
| 2008 | Journal of Applied Physics | Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation Cherkaoui, K,Monaghan, S,Negara, MA,Modreanu, M,Hurley, PK,O'Connell, D,McDonnell, S,Hughes, G,Wright, S,Barklie, RC,Bailey, P,Noakes, TCQ; (2008) Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation. : . [Details] |
| 2007 | Microelectronics Reliability | Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW; (2007) Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks. : . [Details] |
| 2007 | Microelectronics Reliability | Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. : . |
| 2005 | Electrochemical and Solid State Letters | Interface states and Pb defects at the Si(100)/HfO2 interface Hurley, PK,O'Sullivan, BJ,Afanas'ev, VV,Stesmans, A; (2005) Interface states and Pb defects at the Si(100)/HfO2 interface. : . [Details] |
| 2005 | Microelectronics Reliabilitymicroelectronics Reliability | Post deposition UV-induced O(2) annealing of HfO(2) thin films Fang, Q.,Liaw, I.,Modreanu, M.,Hurley, P. K.,Boyd, I. W. (2005) Post deposition UV-induced O(2) annealing of HfO(2) thin films. : . |
| 2005 | Materials Science and Engineering B-Solid State Materials For Advanced Technology | Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies Dubourdieu, C,Roussel, H,Jimenez, C,Audier, M,Senateur, JP,Lhostis, S,Auvray, L,Ducroquet, F,O'Sullivan, BJ,Hurley, PK,Rushworth, S,Hubert-Pfalzgraf, L (2005) Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. : . [Details] |
| 2005 | Microelectronics Reliabilitymicroelectronics Reliability | Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD Decams, J. M.,Guillon, H.,Jimenez, C.,Audier, M.,Senateur, J. P.,Dubourdieu, C.,Cadix, O.,O'Sullivan, B. J.,Modreanu, M.,Hurley, P. K.,Rusworth, S.,Leedham, T. J.,Davies, H.,Fang, Q.,Boyd, I. (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : . |
| 2004 | Journal of the Electrochemical Society | Electrical evaluation of defects at the Si(100)/HfO2 interface O'Sullivan, BJ,Hurley, PK,O'Connor, E,Modreanu, M,Roussel, H,Jimenez, C,Dubourdieu, C,Audier, M,Senateur, JP (2004) Electrical evaluation of defects at the Si(100)/HfO2 interface. : . [Details] |
| 2004 | IEEE Transactions On Electron Devices | Avalanche photodiode-based active pixel imager Marshall, GF,Jackson, JC,Denton, J,Hurley, PK,Braddell, O,Mathewson, A (2004) Avalanche photodiode-based active pixel imager. : . [Details] |
| 2004 | Thin Solid Films | Interface of ultrathin HfO2 films deposited by UV-photo-CVD Fang, Q,Zhang, JY,Wang, Z,Modreanu, M,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Hywel, D,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : . [Details] |
| 2004 | Thin Solid Filmsthin Solid Films | Interface of ultrathin HfO2 films deposited by UV-photo-CVD Fang, Q.,Zhang, J. Y.,Wang, Z.,Modreanu, M.,O'Sullivan, B. J.,Hurley, P. K.,Leedham, T. L.,Hywel, D.,Audier, M. A.,Jimenez, C.,Senateur, J. P.,Boyd, I. W. (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : . |
| 2004 | Journal Of The Electrochemical Societyjournal Of The Electrochemical Society | Electrical evaluation of defects at the Si(100)/HfO2 interface O'Sullivan, B. J.,Hurley, P. K.,O'Connor, E.,Modreanu, M.,Roussel, H.,Jimenez, C.,Dubourdieu, C.,Audier, M.,Senateur, J. P. (2004) Electrical evaluation of defects at the Si(100)/HfO2 interface. : . |
| 2003 | IEEE Transactions on Semiconductor Manufacturing | Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Duane,R.; Hurley, P.; Power, J.A.; Kelly, S.C.; Mathewson, A.; (2003) Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size. : . |
| 2003 | IEEE Transactions on Semiconductor Manufacturing | Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size MacSweeney, D,McCarthy, KG,Floyd, L,Duane, R,Hurley, P,Power, JA,Kelly, SC,Mathewson, A (2003) Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size. : . [Details] |
| 2003 | Thin Solid Films | Interface of tantalum oxide films on silicon by UV annealing at low temperature Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) Interface of tantalum oxide films on silicon by UV annealing at low temperature. : . |
| 2003 | IEEE Transactions on Semiconductor Manufacturing | SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization MacSweeney, D and McCarthy, KG and Floyd, L and Duane, R and Hurley, P and Power, JA and Kelly, SC and Mathewson, A (2003) SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization. : . |
| 2003 | Journal of Applied Physics | Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing Hurley, PK,Stesmans, A,Afanas'ev, VV,O'Sullivan, BJ,O'Callaghan, E (2003) Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing. : . [Details] |
| 2003 | Physica E-Low-Dimensional Systems & Nanostructuresphysica E-Low-Dimensional Systems & Nanostructures | Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices Modreanu, M.,Gartner, A.,Aperathitis, E.,Tomozeiu, N.,Androulidaki, M.,Cristea, D.,Hurley, P. (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : . |
| 2002 | Applied Physics Letters | Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes J. C. Jackson, P. K. Hurley, A. P. Morrison, B. Lane, and A. Mathewson.; (2002) Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes. : . |
| 2002 | Applied Physics Letters | Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes Jackson, JC,Hurley, PK,Lane, B,Mathewson, A,Morrison, AP; (2002) Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes. : . [Details] |
| 2002 | Journal of the Electrochemical Society | Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing Hurley, PK,O'Sullivan, BJ,Cubaynes, FN,Stolk, PA,Widdershoven, FP,Das, JH; (2002) Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing. : . [Details] |
| 2001 | Journal De Physique Iv | Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy Zhang, JY,Fang, Q,Wu, JX,Xu, CY,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW (2001) Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy. : . |
| 2001 | Journal De Physique Iv | Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD O'Sullivan, BJ,O'Connor, E,Howley, R,Hurley, PK,Zhang, JY,Kaliwoh, N,Fang, Q,Boyd, IW,Dubourdieu, C,Audier, MA,Senateur, JP,Davies, HO,Leedham, TJ,Jones, AC,Semmache, B (2001) Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD. : . |
| 2001 | Journal of Applied Physics | Si(100)-SiO2 interface properties following rapid thermal processing O'Sullivan, BJ,Hurley, PK,Leveugle, C,Das, JH (2001) Si(100)-SiO2 interface properties following rapid thermal processing. : . |
| 1999 | Microelectronic Engineering | Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source. Mooney, MB,Hurley, PK,O'Sullivan, BJ,Beechinor, JT,Zhang, JY,Boyd, IW,Kelly, PV,Senateur, JP,Crean, GM,Jimenez, C,Paillous, M (1999) Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source.. : . |
| 1997 | Journal of the Electrochemical Society | Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation Kalnitsky, A,Hurley, PK,Lepert, A; (1997) Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation. : . |
| 1996 | IEEE Electron Device Letters | Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping Yuan, XJ,Kivi, M,Taylor, S,Hurley, P; (1996) Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping. : . |
| 1996 | Microelectronics and Reliability | Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671] Hurley, P. K.; Sheehan, E.; Moran, S.; Mathewson, A.; (1996) Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]. : . |
| 1995 | Quality and Reliability Engineering International | HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A (1995) HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL. : . |
| 1995 | Semiconductor Science and Technology | Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669] Hurley, P. K.; Wall, L.; Moran, S.; Mathewson, A.; (1995) Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]. : . |
| 1994 | Microelectronics Journal | EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A; (1994) EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS. : . |
| Year | Journal | Publication |
|---|---|---|
| 2007 | Solid-State Electronics | Navigation aids in the search for future high-< i> k dielectrics: Physical and electrical trends Engstr"om, Olof and Raeissi, Bahman and Hall, Steve and Buiu, Octavian and Lemme, Max C and Gottlob, HDB and Hurley, PK and Cherkaoui, Karim (2007) Navigation aids in the search for future high-< i> k dielectrics: Physical and electrical trends. : . |
| 2005 | Microelectronics Reliability | Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD Decams, J.M. and Guillon, H. and Jiménez, C. and Audier, M. and Sénateur, J.P. and Dubourdieu, C. and Cadix, O. and O'Sullivan, B.J. and Modreanu, M. and Hurley, P.K. and Rusworth, S. and Leedham, T.J. and Davies, H. and Fang, Q. and Boyd, I. (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : . |
| 2005 | Microelectronics Reliability | Post deposition UV-induced O2 annealing of HfO2 thin films Fang, Q. and Liaw, I. and Modreanu, M. and Hurley, P.K. and Boyd, I.W. (2005) Post deposition UV-induced O2 annealing of HfO2 thin films. : . |
| 2005 | Materials Science and Engineering: B | Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies Dubourdieu, C and Roussel, H and Jimenez, C and Audier, M and S'enateur, JP and Lhostis, S and Auvray, L and Ducroquet, F and O'sullivan, BJ and Hurley, PK and others (2005) Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. : . |
| 2004 | Thin Solid Films | Interface of ultrathin HfO< sub> 2 films deposited by UV-photo-CVD Fang, Q and Zhang, J-Y and Wang, Z and Modreanu, M and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Hywel, D and Audier, MA and Jimenez, C and others (2004) Interface of ultrathin HfO< sub> 2 films deposited by UV-photo-CVD. : . |
| 2004 | Electron Devices, IEEE Transactions on | Avalanche photodiode-based active pixel imager Marshall, GF and Jackson, JC and Denton, J and Hurley, PK and Braddell, O and Mathewson, A (2004) Avalanche photodiode-based active pixel imager. : . |
| 2004 | Thin Solid Films | Interface of ultrathin HfO2 films deposited by UV-photo-CVD Fang, Q. and Zhang, J.-Y. and Wang, Z. and Modreanu, M. and O'Sullivan, B.J. and Hurley, P.K. and Leedham, T.L. and Hywel, D. and Audier, M.A. and Jimenez, C. and Senateur, J.-P. and Boyd, I.W. (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : . |
| 2003 | Physica E: Low-Dimensional Systems and Nanostructures | Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices Modreanu, M. and Gartner, M. and Aperathitis, E. and Tomozeiu, N. and Androulidaki, M. and Cristea, D. and Hurley, P. (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : . |
| 2003 | Thin Solid Films | Investigation of TiO< sub> 2-doped HfO< sub> 2 thin films deposited by photo-CVD Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) Investigation of TiO< sub> 2-doped HfO< sub> 2 thin films deposited by photo-CVD. : . |
| 2003 | Thin Solid Films | Characterisation of HfO< sub> 2 deposited by photo-induced chemical vapour deposition Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) Characterisation of HfO< sub> 2 deposited by photo-induced chemical vapour deposition. : . |
| 2003 | Physica E: Low-dimensional Systems and Nanostructures | Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2 superlattices for Si-based light-emitting devices Modreanu, M and Gartner, M and Aperathitis, E and Tomozeiu, N and Androulidaki, M and Cristea, D and Hurley, Paul (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2 superlattices for Si-based light-emitting devices. : . |
| 2002 | Journal of non-crystalline solids | Nanocrystalline TiO< sub> 2 films studied by optical, XRD and FTIR spectroscopy Zhang, Jun-Ying and Boyd, Ian W and O'Sullivan, BJ and Hurley, PK and Kelly, PV and Senateur, J-P (2002) Nanocrystalline TiO< sub> 2 films studied by optical, XRD and FTIR spectroscopy. : . |
| 2002 | Applied physics letters | Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes Jackson, JC and Hurley, PK and Lane, B and Mathewson, A and Morrison, AP (2002) Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes. : . |
| 2001 | Journal of Applied Physics | Si (100)--SiO 2 interface properties following rapid thermal processing OSullivan, BJ and Hurley, PK and Leveugle, C and Das, JH (2001) Si (100)--SiO 2 interface properties following rapid thermal processing. : . |
| 2000 | Microelectronics Reliability | Interface properties of the Si (100)--SiO< sub> 2 system formed by rapid thermal oxidation O’Sullivan, BJ and Hurley, PK and Mathewson, A and Das, JH and Daniel, AD (2000) Interface properties of the Si (100)--SiO< sub> 2 system formed by rapid thermal oxidation. : . |
| 1998 | Microelectronics Reliability | Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A (1998) Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures. : . |
| 1998 | Microelectronics Reliability | Hot carrier degradation mechanisms in sub-micron< i> p channel MOSFETs: Impact on low frequency (1/f) noise behaviour Sheehan, E and Hurley, PK and Mathewson, A (1998) Hot carrier degradation mechanisms in sub-micron< i> p channel MOSFETs: Impact on low frequency (1/f) noise behaviour. : . |
| 1998 | MRS Proceedings | The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface Hurley, PK and Leveugle, C and Mathewson, A and Doyle, D and Whiston, S and Prendergast, J and Lundgren, P (1998) The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface. : . |
| 1997 | Microelectronic engineering | Impact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A and Lepert, A and Beinglass, I and Venkatesan, M (1997) Impact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures. : . |
| 1996 | Microelectronics Reliability | Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions Duane, R and Martin, A and O'Donovan, P and Hurley, P and O'Sullivan, P and Mathewson, A (1996) Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions. : . |
| Year | Publication |
|---|---|
| 2013 | Device Research Conference (DRC), 2013 71st Annual Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Device Research Conference (DRC), 2013 71st Annual. : . |
| 2013 | Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 Cabrera, W., Dong, H., Brennan, B., O'Connor, E., Carolan, P., Galatage, R., Monaghan, S., Povey, I., Hurley, P.K., Hinkle, C.L., Chabal, Y., Wallace, R.M. (2013) Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. : . [Details] |
| 2012 | 28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790 Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K. (2012) 28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790. : . [Details] |
| 2012 | Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on. : . |
| 2012 | 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349 Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349. : . [Details] |
| 2012 | 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682 Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682. : . [Details] |
| 2009 | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695 Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695. : . [Details] |
| 2009 | IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330 Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330. : . [Details] |
| 2008 | 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151 Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A. (2008) 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151. : . [Details] |
| 2006 | 25th International Conference on Microelectronics Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee, (2006) 25th International Conference on Microelectronics. : . |
| 2003 | International Reliability Physics Symposium (IRPS03) J. C. Jackson, G. Healy, A-M. Kelleher, J. Alderman, J. Donnelly, P. K. Hurley, A. P. Morrison, and A. Mathewson.; (2003) International Reliability Physics Symposium (IRPS03). : . |
| 2003 | Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International Jackson, JC and Healy, G and Kelleher, AM and Alderman, J and Donnelly, J and Hurley, PK and Morrison, AP and Mathewson, A (2003) Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International. : . |
| 2002 | International Conference on Microelectronic Test Structures (ICMTS 2002) MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Mathewson,A.; Hurley,P.; Power,S.; Kelly,S.; (2002) International Conference on Microelectronic Test Structures (ICMTS 2002). : . |
| 2002 | Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on MacSweeney, D and McCarthy, KG and Floyd, L and Mathewson, A and Hurley, P and Power, JA and Kelly, SC (2002) Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on. : . |
| 2001 | Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on Jackson, JC and Morrison, AP and Hurley, P and Harrell, WR and Damjanovic, D and Lane, B and Mathewson, A (2001) Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on. : . |
| 1999 | Plasma Process-Induced Damage, 1999 4th International Symposium on Hurley, PK and Rodrigues, R and Kay, P and Thakur, RPS and Clarke, D and Sheehan, E and Mathewson, A (1999) Plasma Process-Induced Damage, 1999 4th International Symposium on. : . |
| 1999 | Solid-State Device Research Conference, 1999. Proceeding of the 29th European OSullivan, BJ and Hurley, PK and Mathewson, A and Beanland, R and Rodrigues, R and Kay, P (1999) Solid-State Device Research Conference, 1999. Proceeding of the 29th European. : . |
| 1996 | Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on Moran, S and Hurley, PK and Mathewson, A (1996) Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on. : . |
| 1995 | Solid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European Kalnitsky, Alex and Hurley, P and Lepert, Arnaud and Mallardeau, C and Sheehan, Eoin and Mathewson, A (1995) Solid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European. : . |
| 1994 | Solid State Device Research Conference, 1994. ESSDERC'94. 24th European Hurley, PK and Moran, S and Wall, L and Mathewson, A and Mason, B (1994) Solid State Device Research Conference, 1994. ESSDERC'94. 24th European. : . |
| 1993 | Solid State Device Research Conference, 1993. ESSDERC'93. 23rd European Hurley, PK and Wall, L and Mathewson, A (1993) Solid State Device Research Conference, 1993. ESSDERC'93. 23rd European. : . |
| Year | Publication |
|---|---|
| 2011 | AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA. Eric Vogel , A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace (2011) AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA.. : . |
| 2003 | Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September) Hurley, P. K.; Moran, S.; Wall, L.; Mathewson, A.; Mason, B.; (2003) Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September). : . |
| 2003 | Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA Hurley, P. K.; Kalnitsky, A.; Lepert, A.; Moran, S.; Mathewson, A.; (2003) Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA. : . |
| 2003 | Proceeding. ESSDERC 95, The Hague Sheehan, E.; Mathewson, A.; Kalnitsky, A.; Hurley, P. K.; Lepert, A.; Mallardeau, C.; (2003) Proceeding. ESSDERC 95, The Hague. : . |
| 2003 | Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble Hurley, P. K.; Wall, L.; Mathewson, A.; (2003) Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble. : . |
| Year | Publication |
|---|---|
| 2011 | The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system Zhang, PF,Nagle, RE,Deepak, N,Povey, IM,Gomeniuk, YY,O'Connor, E,Petkov, N,Schmidt, M,O'Regan, TP,Cherkaoui, K,Pemble, ME,Hurley, PK,Whatmore, RW (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : . [Details] |
| 2011 | Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric Negara, MA,Goel, N,Bauza, D,Ghibaudo, G,Hurley, PK (2011) Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric. : . [Details] |
| 2011 | Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures Miranda, E,O'Connor, E,Hurley, PK (2011) Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures. : . [Details] |
| 2009 | Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing Gottlob, HDB, Stefani, A, Schmidt, M, Lemme, MC, Kurz, H, Mitrovic, IZ, Werner, M, Davey, WM, Hall, S, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing. : . [Details] |
| 2009 | Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics. : . [Details] |
| 2009 | Growth, Ambient Stability and Electrical Characterisation of Mgo Thin Films On Silicon Surfaces Casey, P, O'Connor, E, Long, R, Brennan, B, Krasnikov, SA, O'Connell, D, Hurley, PK, Hughes, G; (2009) Growth, Ambient Stability and Electrical Characterisation of Mgo Thin Films On Silicon Surfaces. : . [Details] |
| 2009 | Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob, HDB,Stefani, A,Schmidt, M,Lemme, MC,Kurz, H,Mitrovic, IZ,Werner, M,Davey, WM,Hall, S,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Gd silicate: A high-k dielectric compatible with high temperature annealing. : . [Details] |
| 2009 | Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. : . [Details] |
| 2009 | Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics Gottlob, HDB,Schmidt, M,Stefani, A,Lemme, MC,Kurz, H,Mitrovic, IZ,Davey, WM,Hall, S,Werner, M,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. : . [Details] |
| 2009 | Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces Casey, P,O'Connor, E,Long, R,Brennan, B,Krasnikov, SA,O'Connell, D,Hurley, PK,Hughes, G (2009) Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces. : . [Details] |
| 2009 | Degradation dynamics and breakdown of MgO gate oxides Miranda, E,O'Connor, E,Hughes, G,Casey, P,Cherkaoui, K,Monaghan, S,Long, R,O'Connell, D,Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. : . [Details] |
| 2009 | Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2 Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. : . [Details] |
| 2008 | Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB; (2008) Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening. : . [Details] |
| 2008 | Gentle FUSI NiSi metal gate process for high-k dielectric screening Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB (2008) Gentle FUSI NiSi metal gate process for high-k dielectric screening. : . [Details] |
| 2007 | Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation Buiu, O, Hall, S, Engstrom, O, Raeissi, B, Lemme, M, Hurley, PK, Cherkaoui, K; (2007) Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation. : . [Details] |
| 2007 | Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films Farrell, RA, Cherkaoui, K, Petkov, N, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2007) Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films. : . [Details] |
| 2007 | The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets Negara, AA, Cherkaoui, K, Majhi, P, Young, CD, Tsai, W, Bauza, D, Ghibaudo, G, Hurley, PK; (2007) The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets. : . [Details] |
| 2007 | Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends Engstrom, O, Raeissi, B, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K; (2007) Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends. : . [Details] |
| 2007 | Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate Volkos, SN,Bernardinia, S,Rigopoulos, N,Efthymiou, ES,Hawkins, ID,Hamilton, B,Dobaczewski, L,Hall, S,Hurley, PK,Delabie, A,Peaker, AR (2007) Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate. : . [Details] |
| 2007 | Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation Buiu, O,Hall, S,Engstrom, O,Raeissi, B,Lemme, M,Hurley, PK,Cherkaoui, K (2007) Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation. : . [Details] |
| 2007 | Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate Volkos, SN, Bernardinia, S, Rigopoulos, N, Efthymiou, ES, Hawkins, ID, Hamilton, B, Dobaczewski, L, Hall, S, Hurley, PK, Delabie, A, Peaker, AR; (2007) Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate. : . [Details] |
| 2006 | Special Issue - Proceedings of E-Mrs Spring Meeting Symposium L On Characterization of High-K Dielectric Materials, Nice, France, 29 May-2 June 2006 - Preface Dabrowski, J, Hurley, PK, Murota, J, Weber, ER; (2006) Special Issue - Proceedings of E-Mrs Spring Meeting Symposium L On Characterization of High-K Dielectric Materials, Nice, France, 29 May-2 June 2006 - Preface. : . [Details] |
| 2006 | Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK; (2006) Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition. : . |
| 2006 | Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films Hurley, PK, Cherkaoui, K; (2006) Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films. : . |
| 2005 | Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks Schmidt, M,Lemme, MC,Kurz, H,Witters, T,Schram, T,Cherkaoui, K,Negara, A,Hurley, PK (2005) Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks. : . [Details] |
| 2005 | Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD Decams, JM,Guillon, H,Jimenez, C,Audier, M,Senateur, JP,Dubourdieu, C,Cadix, O,O'Sullivan, BJ,Modreanu, M,Hurley, PK,Rusworth, S,Leedham, TJ,Davies, H,Fang, Q,Boyd, I (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : . [Details] |
| 2005 | Post deposition UV-induced O-2 annealing of HfO2 thin films Fang, Q,Liaw, I,Modreanu, M,Hurley, PK,Boyd, IW (2005) Post deposition UV-induced O-2 annealing of HfO2 thin films. : . [Details] |
| 2005 | Optical and electrical characterization of hafnium oxide deposited by MOCVD Lu, Y,Buiu, O,Hall, S,Hurley, PK (2005) Optical and electrical characterization of hafnium oxide deposited by MOCVD. : . [Details] |
| 2003 | Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD. : . [Details] |
| 2002 | Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy Zhang, JY,Boyd, IW,O'Sullivan, BJ,Hurley, PK,Kelly, PV,Senateur, JP (2002) Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy. : . [Details] |
| 1998 | Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures Leveugle, C,Hurley, PK,Mathewson, A,Moran, S,Sheehan, E,Kalnitsky, A (1998) Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures. : . |
| 1998 | Strategies for MilliRad sensitivity in PMOS dosimeters Conneely, C,O'Connell, B,Hurley, P,Lane, W,Adams, L (1998) Strategies for MilliRad sensitivity in PMOS dosimeters. : . |
| 1996 | The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs Hurley, PK,Sheehan, E,Moran, S,Mathewson, A (1996) The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs. : . |
Hosting Transition Year students at Tyndall
Discovery Science Exhibition Cork
I am a member of the technical committee of the international conference “Insulating Films on Semiconductors (INFOS)” and the International “Workshop on Dielectrics in Microelectronics (WoDiM). INFOS and WoDiM are the two main oxide conferences in Europe. Acted as Chair of the 2004 and 2014 WoDiM events in Kinsale, Co. Cork and Co-Chair of the “Characterization of High-k Materials” Symposium L at the 2006 EMRS. I have acted as the external examiner for PhD students from, Dublin City University, Trinity College Dublin, Liverpool University (x4), Manchester University (x2), University Autonoma de Barcelona and the Catholic University of Leuven. I have also acted as the internal examiner for a number of UCC PhD and MSc students Reviewer of National and EU proposals
Semiconductor materials and devices for information and communication technologies
Specialist guest lectures covering recent technology challenges and developments for state of the art transistors
| Student | Degree | Graduation Year | Institution | Thesis |
|---|---|---|---|---|
| Adi Negara | PHD | UCC | A STUDY OF ELECTRON MOBILITY IN HFO2/TIN GATE MOSFETS | |
| Rathnait Long | PHD | UCC | A Study of the Electronic and Structural Properties of the High-κ/In0.53Ga0.47As System | |
| Vladimir Djara | PHD | UCC | Development of Inversion-Mode and Junctiolness InGaAs MOSFETs | |
| Eamon O'Connor | PHD | UCC | Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors |